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Toshiba MG150Q2YS50

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#MG150Q2YS50 Toshiba MG150Q2YS50 New High Power Switching ApplicationsMotor Control Applications, MG150Q2YS50 pictures, MG150Q2YS50 price, #MG150Q2YS50 supplier
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MG150Q2YS50 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS), Toshiba

Collector-emitter voltage Vces=1200V

Gate-emitter voltage Vges=±20V

Collector current DC IC=200 / 150A VCE = 5V

Collector current 1ms ICP=400/300A

Forward current DC IF=150A

Forward current 1ms IFM=300A

collector power dissipation(Tc = 25°C) PC=1250W

Junction temperature Tj=150°C

Storage temperature range Tstg=−40 ~ 125 °C