#SK60GB123 Semikron SK60GB123 New TRANSISTOR IGBT POWER MODULE HALF BRIDGE 1.2kV V(BR)CES 40A I(C) , SK60GB123 pictures, SK60GB123 price, #SK60GB123 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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SK60GB123 Features
.Compact design
.One screw mounting
.Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB)
.High short circuit capability
.Low tail current with low temperature dependence
Typical Applications*
.Switching(not for linear use)
.Inverter
.Switched mode power supplies
.UPS
.One screw mounting
.Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB)
.High short circuit capability
.Low tail current with low temperature dependence
Typical Applications*
.Switching(not for linear use)
.Inverter
.Switched mode power supplies
.UPS
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:40A
Collector current Icp:100A
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
TRANSISTOR IGBT POWER MODULE HALF BRIDGE 1.2kV V(BR)CES 40A I(C)
