NXP BLF7G22L-130N

1.2 Features and benefits „ Excellent ruggedness „ High efficiency „ Low Rth providing excellent thermal stability „ Designed for broadband operation (2000 MHz to 2200 MHz) „ Lower output capacitance for improved performance in Doherty applications „ Designed for low memory effects providing excellent digital pre-distortion capability „ Internally matched for ease of use „ Integrated ESD protection „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.