NTE 1MBH60-100

NTE 1MBH60-100 NTE 1MBH60-100 NTE 1MBH60-100

#1MBH60-100 NTE 1MBH60-100 New Igbt N-channel Enhancement 900v Ic=60a To-3p Case High Speed Switch, 1MBH60-100 pictures, 1MBH60-100 price, #1MBH60-100 supplier
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Email: [email protected]

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Type Designator: 1MBH60-100

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc) 260w

Maximum Collector-Emitter Voltage |Vce| 1000V

Collector-Emitter saturation Voltage |Vcesat| 3.2V

Maximum Gate-Emitter Voltage |Veg| 20V

Maximum Collector Current |Ic| 60A

Maximum Junction Temperature (Tj) 150°C

Igbt N-channel Enhancement 900v Ic=60a To-3p Case High Speed Switch

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