IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled Voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which also has MOSFET The advantages of high input impedance and low on-Voltage drop of GTR. The saturation voltage of GTR is reduced, the current-carrying density is high, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage. It is very suitable to be used in converter systems with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields.
In layman’s terms: IGBT is a high-power power Electronic device. It is a non-on-off switch. IGBT has no function of amplifying voltage. It can be regarded as a wire when it is turned on, and it is regarded as an open circuit when it is turned off. The three main characteristics are high voltage, high current, and high speed.
IGBT is the abbreviation of Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor). IGBT is a device composed of MOSFET and bipolar transistor. Its input is MOSFET and output is PNP transistor. It combines these two The advantages of the device are not only the advantages of low driving power and fast switching speed of MOSFET devices, but also the advantages of reduced saturation voltage and large capacity of bipolar devices. Its frequency characteristics are between MOSFET and power transistors, and it can work normally at several times. Within the frequency range of ten kHz, it has been used more and more widely in modern power electronic technology, and it has occupied a leading position in high-frequency and med